This is a terrible article that is truly grasping at straws to try to paint the XB1 in a light where it might be considered (in some bizarre parallel universe) more capable than it actually is. Truly a low point for Digital Foundry, and I must admit that their recent articles regarding next-gen consoles have caused me to lose a lot of respect for them.
Very little written makes much sense.
I mean, why would the designers of the XB1 HW not know that the eSRAM is capable of both reading and writing to and from memory in certain peculiar cases?
Why does this only apply to production HW if it is merely a facet of the "unused cycles" and not anything like a change in clock speed in production HW (thus creating more cycles in a given time period)?
Why would this somehow present developers with a significant increase in memory performance across all operations, when in actual fact this concurrent read/write ability only occurs in very specific cases?
And why would this imply anything, either negative or affirmative, about the potential yield problems that MS may or may not be having with their APU? It's actually entirely irrelevant.
I must wonder who DF's sources are for this info.. I understand they have an even track record, but even if this is all true, and come down from a real update given to XB1 developers, DF's interpretation of it in this article is just abysmal. Really really bad.
Either way, this is nothing at all to be excited about. An increase in eSRAM bandwidth in the last thing that MS would need to close the gap between their console and PS4. Had this been about a change in main memory bandwidth (which is all but impossible with 256-bit DDR3) then it would have been much more interesting.